View S595TR_4318793.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Not for new design, this product will be obsoleted soon
S595T / S595TR / S595TRW
Vishay Semiconductors
MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage
2 1
Comments
MOSMIC - MOS Monolithic Integrated Circuit
SOT143
Features
* * * * * * * * * Integrated gate protection diodes Low noise figure e3 High gain Biasing network on chip Improved cross modulation at gain reduction High AGC-range SMD package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
3 1
4 2
SOT143R
4 1
3 2
SOT343R
4
3
Electrostatic sensitive device. Observe precautions for handling.
19216
Applications
Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage.
Mechanical Data
Typ: S595T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S595TR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S595TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
C block AGC RF in C block G2 G1 S D
RFC VDD(VDS) RF out C block
94 9296
Parts Table
Part S595T S595TR S595TRW 595 59R W59 Marking SOT-143 SOT-143R SOT-343R Package
Document Number 85049 Rev. 1.7, 08-Sep-08
www.vishay.com 1
S595T / S595TR / S595TRW
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM VG1/G2SM Ptot TCh Tstg Value 8 30 10 6 200 150 - 55 to + 150 Unit V mA mA V mW C C
Maximum Thermal Resistance
Parameter Channel ambient
1) 1)
Test condition
Symbol RthChA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition Symbol Min 7 7 Typ. Max 10 10 50 100 20 50 9 13 1.0 500 18 Unit V V A A nA A mA V IG1S = 10 mA, VG2S = VDS = 0 V(BR)G1SS IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS + IG1SS - IG1SS IG2SS IDSS IDSP VG2S(OFF)
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 - VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current Self-biased operating current Gate 2 - source cut-off voltage VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 A
Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 k collector resistor.
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified VDS = 5 V, VG2S = 4 V, ID= IDSP , f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz Test condition Symbol |y21s| Cissg1 Crss Coss Gps Gps 17 Min 28 Typ. 30 2.3 25 1.1 28 20 Max 35 2.7 Unit mS pF fF pF dB dB
www.vishay.com 2
Document Number 85049 Rev. 1.7, 08-Sep-08
S595T / S595TR / S595TRW
Vishay Semiconductors
Parameter AGC range Noise figure Test condition VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3.3 mS, GL = 1 mS, f = 800 MHz Symbol Gps F F Min 45 1 1.3 Typ. Max Unit dB dB dB
Common Emitter S-Parameters
f/MHz LOG MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 -0.01 -0.03 -0.11 -0.19 -0.28 -0.40 -0.51 -0.64 -0.78 -0.93 -1.07 -1.22 -1.36 -1.49 -1.65 -1.79 -1.94 -2.04 -2.17 -2.29 -2.42 -2.58 -2.70 -2.78 -2.89 -3.00 S11 ANG deg -4.6 -9.2 -13.8 -18.1 -22.6 -26.8 -31.1 -35.2 -39.3 -43.2 -47.1 -50.8 -54.4 -58.2 -61.5 -65.2 -68.6 -72.0 -75.3 -78.7 -82.2 -85.2 -88.4 -91.6 -94.8 -97.7 9.61 9.56 9.44 9.30 9.15 9.00 8.79 8.62 8.35 8.17 7.94 7.71 7.50 7.26 7.08 6.86 6.68 6.44 6.27 6.09 5.93 5.67 5.55 5.41 5.38 5.17 LOG MAG S21 ANG deg 174.3 167.9 161.3 155.1 148.4 142.7 136.8 130.7 125.3 119.7 114.2 108.7 104.1 99.1 94.1 89.2 84.5 79.3 74.4 70.4 65.8 61.1 56.1 51.8 47.1 42.0 -63.13 -56.88 -53.46 -51.38 -49.76 -48.70 -47.92 -47.45 -47.23 -47.10 -47.22 -46.92 -46.68 -46.47 -46.45 -45.89 -44.77 -43.51 -41.91 -40.66 -39.81 -38.89 -37.91 -36.76 -35.65 -34.63 LOG MAG S12 ANG deg 88.0 85.3 82.8 80.7 78.3 77.3 76.4 76.2 76.7 78.4 82.3 88.6 92.6 98.8 107.2 116.7 125.9 133.0 137.1 138.5 140.6 143.6 145.8 148.3 149.7 150.1 -0.08 -0.10 -0.14 -0.16 -0.22 -0.26 -0.30 -0.38 -0.43 -0.49 -0.55 -0.60 -0.66 -0.70 -0.73 -0.78 -0.80 -0.85 -0.87 -0.89 -0.90 -0.92 -0.93 -0.94 -0.93 -0.92 LOG MAG S22 ANG deg -2.1 -4.3 -6.4 -8.6 -11.0 -12.9 -15.1 -17.1 -18.8 -20.6 -22.6 -24.6 -26.1 -27.9 -29.8 -31.7 -33.4 -35.4 -37.2 -39.1 -41.1 -42.6 -44.6 -46.7 -49.1 -51.0
Document Number 85049 Rev. 1.7, 08-Sep-08
www.vishay.com 3
S595T / S595TR / S595TRW
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
P - Total Power Dissipation ( mW ) tot 250 y21s - Forward Transadmittance ( mS ) 40 V DS = 5 V f = 200 MHz 30
200
150
20
100 50 0 0 25 50 75 100 125 150
10
0 0 1 2 3 4 V G2S - Gate 2 Source Voltage ( V )
95 10759
Tamb - AmbientTemperature ( C )
95 11159
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
20 Cissg1 - Gate 1 Input Capacitance ( pF ) ID - Drain Current ( mA ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
13634
16 V G2S = 4 V 12 3V 8 2V 4 0 0 1 2 3 4 1.5 V 1V 5 V DS - Drain Source Voltage ( V )
V DS = 5 V f = 200 MHz
95 11157
1
2
3
4
5
V G2S - Gate 2 Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20 ID - Drain Current ( mA ) V DS = 5 V 16 Coss - Output Capacitance ( pF ) 2.0 V DS = 4 V f = 200 MHz 1.5
12
8 4 0 0 1 2 3 4
1.0
0.5
0.0 3
13635
95 11158
V G2S - Gate 2 Source Voltage ( V )
4
5
6
7
V DS - Drain Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.com 4
Document Number 85049 Rev. 1.7, 08-Sep-08
S595T / S595TR / S595TRW
Vishay Semiconductors
20 - Transducer Gain ( dB ) 10 0 -10 -20 -30 -40 -50 -60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
13636
V DS = 5 V f = 800 MHz
S 21
2
V G2S - Gate 2 Source Voltage ( V )
Figure 7. Transducer Gain vs. Gate 2 Source Voltage
80 CM - Cross Modulation ( dB ) 70 60 50 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
13637
V DS = 5 V f = 800 MHz Pin = -20 dBm
V G2S - Gate 2 Source Voltage ( V )
Figure 8. Cross Modulation vs. Gate 2 Source Voltage
Document Number 85049 Rev. 1.7, 08-Sep-08
www.vishay.com 5
S595T / S595TR / S595TRW
Vishay Semiconductors VDS = 10 V, ID = 10 mA, Z0 = 50
S11
j j0.5
S12
90 120 j2 1300 MHz j0.2 j5 1050 60
30 800 550 300 50 0.008 0.016 0
0
0.2
0.5
1
2
5
50
i
180
-j0.2 1300 MHz 1050 800 -j0.5
12 944
300 550 -j2
-j5 -150 -30 -60
-120 -j
12 945
-90
Figure 9. Input Reflection Coefficient
Figure 11. Reverse Transmission Coefficient
S21
550 300 90 800
S22
j
60
1050 30 1300 MHz j0.2
j0.5
j2
j5
50 180 1.0 2.0 0 0 0.2 0.5 1 2
-j0.2 -150 -30 -j0.5 -120
12 946
5 50 300 550 -j5 800 1050 -j2
1300 MHz -j
-60 -90
12 947
Figure 10. Forward Transmission Coefficient
Figure 12. Output Reflection Coefficient
www.vishay.com 6
Document Number 85049 Rev. 1.7, 08-Sep-08
S595T / S595TR / S595TRW
Vishay Semiconductors Package Dimensions in mm
96 12239
Package Dimensions in mm
0.1 [0.004] max. 1.1 [0.043] 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030]
foot print recommendation:
3 [0.118] 2.8 [0.110]
0.5 [0.020] 0.35 [0.014]
0.5 [0.020] 0.35 [0.014]
0.15 [0.006]
0.08 [0.003]
1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 0.8 [0.031] 1.2 [0.047]
1.4 [0.055]
1.2 [0.047]
0.9 [0.035] 0.8 [0.031] 2 [0.079]
2 [0.079] 1.8 [0.071]
0.8 [0.031] 1.9 [0.075]
96 12240
Document Number 85049 Rev. 1.7, 08-Sep-08
www.vishay.com 7
S595T / S595TR / S595TRW
Vishay Semiconductors Package Dimensions in mm
96 12238
www.vishay.com 8
Document Number 85049 Rev. 1.7, 08-Sep-08
S595T / S595TR / S595TRW
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85049 Rev. 1.7, 08-Sep-08
www.vishay.com 9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1

▲Up To Search▲

Price & Availability of S595TR

	To Download S595TR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .